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Glossary
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- B
- billion: boron
- Ba
- barium
- BACT
- best available control technology
- BASE
- Boston Area Semiconductor Ekucation (Council)
- BAW
- bulk acoustic wave
- BC
- bias contrast
- BCAD
- business computer-aided manufacturing
- BCD
- binary coded decimal
- BDEV
- behavior-level deviation
- BDS
- Brownian Dynamics Simulation
- Be
- beryllium
- BENU
- bull's eye nonuniformity
- BEOL
- back-end of line
- BESOI
- bonded and etchback SOI
- BF
- Brightfield
- BFGS
- Broyden-Fletcher-Goldfarb-Shanno optimization algorithm
- BFL
- buffered field-effect-transistor logic
- BGA
- ball grid array
- BHT
- Brinell hardness test
- BI
- burn in
- Bi
- bismuth
- BiCMOS
- bipolar complementary metal-oxide semiconductor
- BIFET
- bipolar field-effect transistor
- BIM
- binary intensity mask
- BiMOS
- bipolar metal-oxide semiconductor
- BIST
- built-in self test
- BIT
- bulk ion temperature
- BITE
- built-in test equipment
- Bk
- berkelium
- BLD
- beam lead device
- BLEVE
- boiling liquid expanding vapor explosion
- BMC
- bubble memory controller
- BOE
- buffered oxide etchant
- BOR
- bottom of range
- BOSS
- Book of SEMI Standards; binary object storage system
- BOX
- buried oxide
- BPR
- beam profile reflectometry; business process re-engineering
- BPSG
- boro phosphosilicate
- BPTEOS
- borophosphosilicate glass from a TEOSÔ source (TEOS is a
trademark of NALCO Chemical Company.)
- Br
- bromine
- BSE
- backscattered electron detection
- BTAB
- bumped tape automated bonding
- BV
- breakdown voltage
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